BUK655R0-75C,127 NXP Semiconductors, BUK655R0-75C,127 Datasheet - Page 7

• Manufacturer Part Number: BUK655R0-75C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK655R0-75C,127

• Input Capacitance (ciss) @ Vds: 11400pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Power - Max: 263W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 263 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK655R0-75C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
R
(mΩ)
g
fs
DSon
250
200
150
100
50
20
15
10
0
5
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
40
5
…continued
80
10
120
15
All information provided in this document is subject to legal disclaimers.
V
003aae430
003aae758
I
D
GS
(A)
(V)
Conditions
I
see
I
V
S
S
GS
Rev. 02 — 14 October 2010
160
20
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
= 0 V; T
= 25 V
Fig 6.
Fig 8.
(A)
(A)
I
I
D
D
200
150
100
200
160
120
j
50
80
40
= 25 °C;
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
V
GS
(V) = 10.0
0.5
T
j
= 175 °C
2
BUK655R0-75C
Min
-
-
-
N-channel TrenchMOS FET
6.0
1
5.0
T
4
j
Typ
0.85
62
153
= 25 °C
1.5
© NXP B.V. 2010. All rights reserved.
V
GS
003aae756
003aae759
V
DS
4.5
(V)
Max
1.2
-
-
4.0
3.8
(V)
3.6
3.4
2
6
Unit
V
ns
nC
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