BUK662R5-30C,118 NXP Semiconductors, BUK662R5-30C,118 Datasheet - Page 5

• Manufacturer Part Number: BUK662R5-30C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK662R5-30C,118

• Input Capacitance (ciss) @ Vds: 6960pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Power - Max: 204W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 204 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK662R5-30C
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
−6
Thermal characteristics
δ = 0.5
0.05
0.02
0.2
0.1
Parameter
thermal resistance
from junction to
mounting base
single shot
10
−5
Conditions
see
All information provided in this document is subject to legal disclaimers.
10
−4
Figure 4
Rev. 2 — 14 October 2010
10
−3
N-channel TrenchMOS intermediate level FET
10
−2
BUK662R5-30C
Min
-
10
P
−1
Typ
-
t
p
T
t p (s)
© NXP B.V. 2010. All rights reserved.
003aae531
δ =
Max
0.74
t
T
t
p
1
Unit
K/W
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