BUK662R5-30C,118 NXP Semiconductors, BUK662R5-30C,118 Datasheet - Page 4

• Manufacturer Part Number: BUK662R5-30C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK662R5-30C,118

• Input Capacitance (ciss) @ Vds: 6960pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Power - Max: 204W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 204 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK662R5-30C
Product data sheet
Fig 1.
Fig 3.
(A)
I
10
D
(A)
10
10
200
I
160
120
D
10
80
40
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
T
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
mb
= 25°C; I
50
DM
(1)
is a single pulse
Limit R
100
DSon
= V
150
DS
/ I
All information provided in this document is subject to legal disclaimers.
T
003aae559
D
mb
1
(°C)
200
Rev. 2 — 14 October 2010
Fig 2.
P
(%)
der
DC
120
N-channel TrenchMOS intermediate level FET
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
BUK662R5-30C
100
V
DS
(V)
t
100 μ s
10 ms
1 ms
100 ms
p
=10 μ s
150
© NXP B.V. 2010. All rights reserved.
T
003aae530
mb
03na19
(°C)
10
200
2
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