BUK6218-40C,118 NXP Semiconductors, BUK6218-40C,118 Datasheet - Page 10

• Manufacturer Part Number: BUK6218-40C,118
• Description: MOSFET N-CH TRENCH DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6218-40C,118

• Input Capacitance (ciss) @ Vds: 1170pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 18 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 42 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT428 (DPAK)
BUK6218-40C
Product data sheet
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT428
2.38
2.22
L
A
2
b
1
0.93
0.46
A
1
1
e
0.89
0.71
b
IEC
b
e
E
2
1
2
1.1
0.9
b
b
1
5.46
5.00
b
2
3
JEDEC
TO-252
0.56
0.20
All information provided in this document is subject to legal disclaimers.
c
A
w
0
D
L
M
1
REFERENCES
A
6.22
5.98
D
H
1
D
Rev. 1 — 4 October 2010
min
4.0
D
mounting
base
2
L
JEITA
SC-63
1
scale
6.73
6.47
E
5
c
A
1
4.45
min
E
A
1
y
N-channel TrenchMOS intermediate level FET
2.285
e
4.57
10 mm
e
1
10.4
H
9.6
D
PROJECTION
EUROPEAN
2.95
2.55
BUK6218-40C
L
E
1
min
0.5
L
1
© NXP B.V. 2010. All rights reserved.
0.9
0.5
L
2
ISSUE DATE
06-02-14
06-03-16
0.2
w
D
2
SOT428
max
0.2
y
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