BUK7Y08-40B,115 NXP Semiconductors, BUK7Y08-40B,115 Datasheet - Page 9
![MOSFET N-CH 30V 75A LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
BUK7Y08-40B,115
Manufacturer Part Number
BUK7Y08-40B,115
Description
MOSFET N-CH 30V 75A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7Y08-40B115.pdf
(14 pages)
Specifications of BUK7Y08-40B,115
Input Capacitance (ciss) @ Vds
2040pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
36.3nC @ 10V
Power - Max
105W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5511-2
NXP Semiconductors
BUK7Y08-40B
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
10
8
6
4
2
0
charge; typical values.
0
10
V DS =14 V
20
(A)
I
S
80
60
40
20
30
0
V DS =32 V
0.2
All information provided in this document is subject to legal disclaimers.
Q
003aad503
G
(nC)
40
0.4
Rev. 03 — 7 April 2010
175 °C
0.6
Fig 15. Input, output and reverse transfer capacitances
T
j
= 25 °C
(pF)
10
10
10
C
4
3
2
0.8
10
as a function of drain-source voltage; typical
values.
-1
N-channel TrenchMOS standard level FET
003aad502
V
S D
(V)
1
1
BUK7Y08-40B
10
© NXP B.V. 2010. All rights reserved.
V
DS
C
C
C
003aad504
iss
oss
rss
(V)
10
2
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