BUK7Y08-40B,115 NXP Semiconductors, BUK7Y08-40B,115 Datasheet - Page 7

• Manufacturer Part Number: BUK7Y08-40B,115
• Description: MOSFET N-CH 30V 75A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y08-40B,115

• Input Capacitance (ciss) @ Vds: 2040pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 36.3nC @ 10V
• Power - Max: 105W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5511-2

NXP Semiconductors
BUK7Y08-40B
Product data sheet
Fig 6.
Fig 8.
(A)
(A)
I
I
D
80
60
40
20
D
80
60
40
20
0
0
function of drain-source voltage; typical values.
function of gate-source voltage; typical values.
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
20
10
1
2
T
j
= 175 °C
2
4
3
25 °C
V
6
GS
All information provided in this document is subject to legal disclaimers.
4
V
003aad499
(V) =
003aad551
V
GS
DS
(V)
5.8
5.2
6.1
5.6
4.8
4.5
(V)
5
8
Rev. 03 — 7 April 2010
Fig 7.
Fig 9.
R
(mΩ)
g
(S )
DSon
fs
30
24
18
12
56
44
32
20
6
0
of drain current; typical values.
drain current; typical values.
Drain-source on-state resistance as a function
Forward transconductance as a function of
0
0
N-channel TrenchMOS standard level FET
V
GS
(V) =
20
20
5.2
BUK7Y08-40B
40
40
5.6
5.8
60
60
© NXP B.V. 2010. All rights reserved.
I
003aad500
003aad501
I
D
D
6.1
(A)
(A)
10
20
80
80
7 of 14