BUK9Y22-30B,115 NXP Semiconductors, BUK9Y22-30B,115 Datasheet - Page 8

• Manufacturer Part Number: BUK9Y22-30B,115
• Description: MOSFET N-CH 30V 37.7A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y22-30B,115

• Input Capacitance (ciss) @ Vds: 940pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 37.7A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 10.5nC @ 5V
• Power - Max: 59.4W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5527-2

NXP Semiconductors
BUK9Y22-30B
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
2.0
1.5
1.0
0.5
0.0
1.5
0.5
2
1
0
−60
−60
junction temperature
factor as a function of junction temperature
0
0
60
60
max
min
typ
120
120
All information provided in this document is subject to legal disclaimers.
003aab986
T
003aab851
T
j
j
(°C)
(°C)
180
180
Rev. 04 — 7 April 2010
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSON
I
10
10
10
10
10
10
D
−1
−2
−3
−4
−5
−6
33
27
21
15
9
gate-source voltage
of gate-source voltage; typical values.
0
0
N-channel TrenchMOS logic level FET
4
min
1
BUK9Y22-30B
8
typ
2
max
12
V
© NXP B.V. 2010. All rights reserved.
GS
003aac964
V
003aab987
GS
(V)
(V)
16
3
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