BUK9Y22-30B,115 NXP Semiconductors, BUK9Y22-30B,115 Datasheet - Page 11
![MOSFET N-CH 30V 37.7A LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
BUK9Y22-30B,115
Manufacturer Part Number
BUK9Y22-30B,115
Description
MOSFET N-CH 30V 37.7A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9Y22-30B115.pdf
(14 pages)
Specifications of BUK9Y22-30B,115
Input Capacitance (ciss) @ Vds
940pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
37.7A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
10.5nC @ 5V
Power - Max
59.4W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5527-2
NXP Semiconductors
8. Revision history
Table 7.
BUK9Y22-30B
Product data sheet
Document ID
BUK9Y22-30B_4
Modifications:
BUK9Y22-30B_3
Revision history
Release date
20100407
20100216
•
Status changed from objective to product.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 04 — 7 April 2010
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK9Y22-30B
BUK9Y22-30B_2
Supersedes
BUK9Y22-30B_3
© NXP B.V. 2010. All rights reserved.
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