PSMN017-60YS,115 NXP Semiconductors, PSMN017-60YS,115 Datasheet - Page 2

MOSFET N-CH LFPAK

PSMN017-60YS,115

Manufacturer Part Number
PSMN017-60YS,115
Description
MOSFET N-CH LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN017-60YS,115

Input Capacitance (ciss) @ Vds
1172pF @ 30V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15.7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
20nC @ 10V
Power - Max
74W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
24.7 mOhms
Drain-source Breakdown Voltage
54 V
Continuous Drain Current
31 A
Power Dissipation
74 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5581-2
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN017-60YS_2
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN017-60YS
Symbol
S
S
S
G
D
Pinning information
Ordering information
Package
Name
LFPAK
Description
source
source
source
gate
mounting base; connected to
drain
Table 1.
Symbol Parameter
Static characteristics
R
DSon
drain-source
on-state resistance
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads
Quick reference
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 April 2010
…continued
N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET
Conditions
V
T
V
T
j
j
GS
GS
= 100 °C; see
= 25 °C; see
Simplified outline
= 10 V; I
= 10 V; I
SOT669 (LFPAK)
D
D
1 2 3 4
= 15 A;
= 15 A;
Figure 13
Figure 12
mb
PSMN017-60YS
Graphic symbol
Min
-
-
Typ
-
12.3
mbb076
G
© NXP B.V. 2010. All rights reserved.
Max
25
15.7
Version
SOT669
D
S
Unit
mΩ
mΩ
2 of 15

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