PSMN017-60YS,115 NXP Semiconductors, PSMN017-60YS,115 Datasheet - Page 12

• Manufacturer Part Number: PSMN017-60YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-60YS,115

• Input Capacitance (ciss) @ Vds: 1172pF @ 30V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 24.7 mOhms
• Drain-source Breakdown Voltage: 54 V
• Continuous Drain Current: 31 A
• Power Dissipation: 74 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5581-2

NXP Semiconductors
8. Revision history
Table 7.
PSMN017-60YS_2
Product data sheet
Document ID
PSMN017-60YS_2
Modifications:
PSMN017-60YS_1
Revision history
20100122
Release date
20100401
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Objective data sheet
Product data sheet
Rev. 02 — 1 April 2010
N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET
Change notice
-
-
PSMN017-60YS
Supersedes
PSMN017-60YS_1
-
© NXP B.V. 2010. All rights reserved.
12 of 15