BGS 12AL7-4 E6327 Infineon Technologies, BGS 12AL7-4 E6327 Datasheet - Page 11

• Manufacturer Part Number: BGS 12AL7-4 E6327
• Description: RF Switch ICs GEN PURPOSE RF MOS SWITCH
• Manufacturer: Infineon Technologies

Specifications of BGS 12AL7-4 E6327

• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 30 C
• Mounting Style: SMD/SMT
• Number Of Switches: Single
• Switch Configuration: Single SPDT
• Package / Case: TSLP
• Frequency (max): 3GHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGS12AL74E6327XT

4
Test Conditions:
•
•
•
•
•
Table 5
Parameter
Insertion Loss
Return Loss
Isolation RFin - RF1
Isolation RFin - RF2
Isolation RF1 - RF2
Isolation RF ports - Vdd, Vctrl
Harmonic Generation up to 12.75 GHz
On Switching Time (10-90%) RF
Off Switching Time (10-90%) RF
Current Consumption at Vdd Pin
Input 0.1 dB compression
1) @TA= 25 °C
2) Not measured in production, verified by design
Preliminary Data Sheet
Termination port impedance:
Temperature range:
Supply Voltage:
P
Across operating range of control voltages:
in
= 15 dBm
Electrical Specifications
Electrical Characteristics
V
dd
= 2.8 V
T
A
= -30 °C...+85 °C
Z
0
= 50 Ω
Symbol
IL
RL
ISO
ISO
ISO
ISO
P
t
t
I
P
on
off
dd
Harm
0.1dB
RFin-RF1
RFin-RF2
RF1-RF2
RF-DC
V
CtrH
= 1.4...2.8 V
Min.
–
–
–
–
15
13
–
22
18
–
22
18
–
24
18
25
15
–
–
–
–
–
21
11
2)
Values
Typ.
0.3
0.4
0.5
30
22
22
50
32
25
50
32
25
50
32
25
30
20
-75
-80
3
0.5
120
–
2)
2)
2)
2)
2)
2)
2)
1)2)
1)
1)
2)
2)
2)
Max.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
-50
-50
5
5
–
–
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
μs
μs
μA
dBm
Note / Test Condition
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
–
f
Electrical Specifications
Revision 1.3, 2009-06-24
= 0.1 GHz TX,
= 1 GHz TX,
= 2 GHz TX,
= 0.1 GHz
= 1 GHz
= 2 GHz
= 0.1 GHz
= 1 GHz
= 2 GHz
= 0.1 GHz
= 1 GHz
= 2 GHz
= 0.1 GHz
= 1 GHz
= 2 GHz
= 1 GHz
= 2 GHz
= 1 GHz
= 2 GHz
= 1 GHz
= 1 GHz
= 1 GHz
SPDT RF Switch
BGS12AL7-4