DG9461DV-T1-E3 Vishay, DG9461DV-T1-E3 Datasheet - Page 2

Analog Switch ICs Low Volt SPDT Switch

DG9461DV-T1-E3

Manufacturer Part Number
DG9461DV-T1-E3
Description
Analog Switch ICs Low Volt SPDT Switch
Manufacturer
Vishay
Datasheet

Specifications of DG9461DV-T1-E3

Number Of Switches
Single
Switch Configuration
SPDT
On Resistance (max)
80 Ohms
On Time (max)
120 ns
Off Time (max)
50 ns
Supply Voltage (max)
12 V
Supply Voltage (min)
2.7 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TSOP
Minimum Operating Temperature
- 40 C
Analog Switch Type
SPDT
No. Of Channels
1
On State Resistance Max
30ohm
Turn Off Time
20ns
Turn On Time
35ns
Supply Voltage Range
2.7V To 12V
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
DG9461
Vishay Siliconix
Notes:
a. Signals on S
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/°C above 75 °C.
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
IN, COM, NC, NO
Continuous Current (Any terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
ESD (Method 3015.7)
Storage Temperature (D Suffix)
Power Dissipation (Packages)
SPECIFICATIONS (V+ = 3 V)
Parameter
Analog Switch
Analog Signal Range
Drain-Source On-Resistance
r
r
NO or NC Off Leakage
Current
COM Off Leakage Current
Channel-On Leakage Current
Digital Control
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
Off-Isolation
Source Off Capacitance
Channel-On Capacitance
Power Supply
Power Supply Range
Power Supply Current
DS(on)
DS(on)
Match
Flatness
g
d
X
, D
f
X
a
, or IN
d
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
g
g
b
I
I
INL
V
Flatness
NO/NC(off)
Symbol
I
I
Δr
COM(off)
COM(on)
r
r
ANALOG
C
C
OIRR
DS(on)
DS(on)
t
Q
DS(on)
t
OFF
D(on)
S(off)
V+
or I
ON
I+
t
INJ
d
INH
8-Pin Narrow Body SOIC
V
V
V+ = 3 V, ±10 %, V
NO
COM
C
R
V
V
Unless Otherwise Specified
L
or V
NO
L
COM
= 1 nF, V
= 1 V/2 V, V
= 50 Ω, C
V
or V
NO
NC
V
V
V+ = 3.3 V, V
= V
Test Conditions
NO
NO
or V
= 1 V/2 V, V
NC
I
COM
NO
or V
or V
f = 1 MHz
gen
= 1.5 V, V+ = 2.7 V
NC
L
or V
= 5 pF, f = 1 MHz
= 5 mA
NO
NC
NC
= 0 V, R
= 1 and 2 V
IN
NC
= 1.5 V
or V
= 1.5 V
c
= 0.4 or 2.4 V
IN
COM
= 1 V/2 V
NC
= 0 or 3.3 V
gen
= 2 V/1 V
= 2 V/1 V
= 0 Ω
e
- 0.3 V to (V+ + 0.3 V)
Temp
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
- 0.3 to + 13
- 65 to 125
a
> 2000
Limit
± 20
± 40
400
- 10000
- 5000
- 5000
Min
- 100
- 100
- 200
2.7
0
3
c
S-71009–Rev. C, 14-May-07
- 40 to 85 °C
Document Number: 70832
D Suffix
Typ
- 74
0.4
50
10
50
20
20
32
4
5
5
1
1
7
b
10000
Max
5000
5000
140
100
100
200
120
200
120
80
50
12
3
2
8
5
1
Unit
mW
c
mA
°C
V
V
Unit
pC
pA
µA
dB
pF
µA
ns
V
Ω
V

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