FP1189-G TriQuint, FP1189-G Datasheet - Page 9

• Manufacturer Part Number: FP1189-G
• Description: RF Mixer 50-4000MHz +27dBm P1dB
• Manufacturer: TriQuint

Specifications of FP1189-G

• Frequency Range: 915 MHz to 2450 MHz
• Maximum Operating Temperature: + 160 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Operating Supply Voltage: 8 V
• Supply Current: 125 mA
• Package / Case: SOT-89
• Noise Figure: 2.7 dB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1066922

The 2450 MHz Reference Circuit is shown for design purposes only. An
evaluation board is not readily available for this application. The reader can
obtain an FP1189-PCB2140S evaluation board and modify it with the circuit
shown to achieve the performance shown in this reference design. Only two
component changes are required (C4 and L3) from the FP1189-PCB2140S
evaluation board.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com, www.TriQuint.com
P=
Z=
POR T
1
50 Ohm
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
Drain Voltage
Drain Current
(+12 dBm / tone, 1 MHz spacing)
ID =
CAP
C =
ID =
14 mil GETEK
The main microstrip line has a line impedance of 50 Ω.
CAP
C =
C1
22 pF
FP1189
½-Watt HFET
C4
1.2 pF
C4
Typical RF Performance, 25°C
TM
L os s=
TLINP
Eef f=
ML200DSS (ε
I D =
Z 0=
F 0=
ID =
ID =
L =
RES
R =
IN D
The lengths shown in the microstrip lines are referenced from the component or pin edge-to-edge.
L=
T L2
5 0 Ohm
4 5 mil
4 .2
0
0 M Hz
-Vgg
R1
100 Ohm
L1
18 nH
r
Loss=
= 4.2)
TLINP
Eef f=
MHz
Z0=
F0=
dBm
dBm
ID =
ID =
ID =
mA
CAP
C =
CAP
C =
L=
dB
dB
dB
V
TL1
50 Ohm
13 5 mil
4.2
0
0 MHz
C3
33 pF
C2
DN P pF
The application circuit is matched for output power.
Reference Design: 2450 MHz
+27.5
2450
+38
100
+8
13.2
ID =
-7.6
RES
R =
-36
R2
10 Ohm
+28.1
2450
+40
125
+8
1
NET=
SU BC KT
ID =
Q1
"FP1189"
2
Loss=
TLINP
Eef f=
Z0=
F0=
-10
-15
-20
-25
-30
ID =
15
10
L=
-5
5
0
Ref. Desig.
C1, C7, C9
C3
C4
C5
C8
L1, L2
L3
R1
R2
Q1
C2, C4, C6, C11
TL3
50 Ohm
8 0 mil
4.2
0
0 MHz
2200
DB(|S[1,1]|)
2300
Specifications and information are subject to change without notice.
ID =
IN D
L=
L3
1.8 nH
Value
22 pF
33 pF
1.2 pF
0.5 pF
0.1 μF
18 nH
1.8 nH
100 Ω
10 Ω
FP1189
DB(|S[2,1]|)
Bill of Materials
2400
Frequency (MHz)
S-Parameters
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip resistor
Chip resistor
Chip resistor
WJ 0.5W HFET
Do Not Place
Loss=
TLINP
Eef f=
Z0=
F0=
ID =
L=
TL4
50 Ohm
3 5 mil
4.2
0
0 MHz
DB(|S[2,2]|)
2500
ID =
ID =
ID =
CAP
C =
CAP
C =
CAP
C =
Vds = 8 V @ 125 mA
C8
100000 pF
C6
DN P pF
C7
22 pF
ID =
Page 9 of 11
CAP
C =
C5
0.5 pF
ID =
2600
IN D
L=
L2
18 nH
ID =
CAP
C =
C7
22 pF
Size
0603
0805
0603
0603
1206
0603
0603
0603
0603
SOT-89
January 2008
P=
Z=
POR T
2700
2
50 Ohm