FP1189-G TriQuint, FP1189-G Datasheet

RF Mixer 50-4000MHz +27dBm P1dB

FP1189-G

Manufacturer Part Number
FP1189-G
Description
RF Mixer 50-4000MHz +27dBm P1dB
Manufacturer
TriQuint
Datasheet

Specifications of FP1189-G

Frequency Range
915 MHz to 2450 MHz
Maximum Operating Temperature
+ 160 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Operating Supply Voltage
8 V
Supply Current
125 mA
Package / Case
SOT-89
Noise Figure
2.7 dB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1066922

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FP1189-G
Manufacturer:
WJ
Quantity:
12 800
Part Number:
FP1189-G
Manufacturer:
WJ
Quantity:
20 000
Product Features
Applications
Specifications
1. I
2. Pinch-off voltage is measured when I
3. Test conditions unless otherwise noted: T = 25ºC, V
4. 3OIP measured with
Absolute Maximum Rating
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com
Operation of this device above any of these parameters may cause permanent damage.
DC Parameter
Saturated Drain Current, I
Transconductance, G
Pinch Off Voltage, V
RF Parameter
Operational Bandwidth
Test Frequency
Small Signal Gain
SS Gain (50 Ω, unmatched)
Maximum Stable Gain
Output P1dB
Output IP3
Noise Figure
Drain Bias
Parameter
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, V
Junction Temperature
Thermal Resistance
50 – 4000 MHz
+27 dBm P1dB
+40 dBm Output IP3
High Drain Efficiency
20.5 dB Gain @ 900 MHz
Lead-free/Green/
compliant
MTTF >100 Years
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
circuit with Z
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
dss
is measured with V
L
= Z
FP1189
½-Watt HFET
SOT-89 Package
(4)
LOPT
two
gs
, Z
tones at an output power of +12 dBm/tone separated by 1 MHz. The
= 0 V, V
S
RoHS-
= Z
(3)
m
p
SOPT
(2)
ds
dss
(optimized for output power).
= 3 V.
dg
ds
(1)
= 1.2 mA.
Units Min
Units Min
MHz
MHz
dBm
dBm
mA
mS
dB
dB
dB
dB
V
DS
= 8 V, I
The FP1189 is a high performance ½-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a drain
bias of +8 V and 125 mA to achieve +40 dBm output IP3
performance and an output power of +27 dBm at 1-dB
compression, while providing 20.5 dB gain at 900 MHz.
The device conforms to WJ Communications’ long history
of producing high reliability and quality components. The
FP1189 has an associated MTTF of greater than 100 years
at a mounting temperature of 85 °C and is available in both
the standard SOT-89 package and the environmentally-
friendly lead-free/green/RoHS-compliant and green SOT-
89 package. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Rating
-55 to +150 °C
2.0 W
6 dB above Input P1dB
+16 V
+160 °C
50 °C / W
DQ
220
50
17
= 125 mA, in a tuned application
+8 V @ 125 mA
Product Description
+27.4
Typ
Typ
20.5
-2.1
290
155
+40
800
2.7
24
Max
Max
4000
360
21
Typical Performance
5. Typical parameters represent performance in a tuned application circuit.
Ordering Information
Standard T/R size = 1000 pieces on a 7” reel.
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
IS-95 Channel Power
W-CDMA Ch. Power
Drain Voltage
Drain Current
Part No.
FP1189-G
FP1189-PCB900S
FP1189-PCB1900S
FP1189-PCB2140S
@ -45 dBc ACPR
@ -45 dBc ACLR
(4)
Specifications and information are subject to change without notice.
Units
Description
½ -Watt HFET
(lead-free/green/RoHS-compliant SOT-89 package)
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
MHz
dBm
dBm
dBm
mA
dB
dB
dB
dB
V
Functional Diagram
+27.4 +27.2 +27.2 +28.1
+39.9 +40.4 +39.7 +40.0
20.6
+21
915
6.0
2.7
13
Output / Drain
(5)
Input / Gate
RF IN
Function
Ground
1
+20.8
1960
15.7
9.6
3.7
26
Typical
Page 1 of 11
GND
GND
125
+8
2
4
+18.4
2140
14.7
4.3
9.0
24
RF OUT
Pin No.
3
2, 4
1
3
January 2008
2450
13.2
7.6
36

Related parts for FP1189-G

FP1189-G Summary of contents

Page 1

... ACLR Drain Voltage +27.4 Drain Current +40 2.7 5. Typical parameters represent performance in a tuned application circuit 125 mA = 125 mA tuned application DQ Ordering Information Part No. FP1189-G FP1189-PCB900S FP1189-PCB1900S FP1189-PCB2140S Standard T/R size = 1000 pieces on a 7” reel. Functional Diagram GND GND RF OUT Function Pin No ...

Page 2

... FP1189 ½-Watt HFET S-Parameters (V S21, Maximum Stable Gain vs. Frequency DB(|S[2,1]|) DB(MSG Frequency (GHz) Note: Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines. The S-parameters shown are the de-embedded data down to the device leads and represents typical performance of the device. ...

Page 3

... FP1189 ½-Watt HFET Application Circuit: 870 – 960 MHz (FP1189-PCB900S) Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+12 dBm / tone, 1 MHz spacing) Noise Figure IS-95 Channel Power @ -45 dBc ACPR -Vgg ...

Page 4

... FP1189 ½-Watt HFET FP1189-PCB900S Application Circuit Performance Plots S11 vs. Frequency 0 -40c +25c +85c -5 -10 -15 -20 -25 -30 860 880 900 920 940 Frequency (MHz) P1dB vs. Frequency -40c +25c +85c 20 860 880 900 920 940 Frequency (MHz) OIP3 vs. Temperature freq = 915, 916 MHz ...

Page 5

... FP1189 ½-Watt HFET Application Circuit: 1930 – 1990 MHz (FP1189-PCB1900S) Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+12 dBm / tone, 1 MHz spacing) Noise Figure IS-95 Channel Power @ -45 dBc ACPR -Vgg ...

Page 6

... FP1189 ½-Watt HFET FP1189-PCB1900S Application Circuit Performance Plots S11 vs. Frequency 0 -40C +25C +85C -5 -10 -15 -20 -25 -30 1930 1950 1970 1990 Frequency (MHz) P1dB vs. Frequency -40C +25C +85C 20 1930 1950 1970 1990 Frequency (MHz) OIP3 vs. Temperature freq = 1960, 1961 MHz +12 dBm / tone ...

Page 7

... FP1189 ½-Watt HFET Application Circuit: 2110 – 2170 MHz (FP1189-PCB2140S) Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+12 dBm / tone, 1 MHz spacing) Noise Figure W-CDMA Channel Power @ -45 dBc ACPR -Vgg ...

Page 8

... FP1189 ½-Watt HFET FP1189-PCB2140S Application Circuit Performance Plots S11 vs. Frequency 0 -40c +25c +85c -5 -10 -15 -20 -25 -30 2110 2130 2150 2170 Frequency (MHz) P1dB vs. Frequency -40C +25C +85C 20 2110 2130 2150 2170 Frequency (MHz) OIP3 vs. Temperature freq = 2140, 2141 MHz +12 dBm / tone ...

Page 9

... The 2450 MHz Reference Circuit is shown for design purposes only. An evaluation board is not readily available for this application. The reader can obtain an FP1189-PCB2140S evaluation board and modify it with the circuit shown to achieve the performance shown in this reference design. Only two component changes are required (C4 and L3) from the FP1189-PCB2140S evaluation board ...

Page 10

... The active-bias circuit, shown on the right, uses dual PNP transistors to provide a constant drain current into the FP1189, while also eliminating the effects of pinchoff variation. This configuration is best suited for applications where the intended output power level of the amplifier is backed off at least 6 dB away from its compression point ...

Page 11

... Land Pattern WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com Product Marking The FP1189-G will be marked with an “FP11G” designator. An alphanumeric lot code (“XXXX-X”) is also marked below the part designator on the top surface of the package ...

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