SST25VF080B-50-4C-QAF Microchip Technology, SST25VF080B-50-4C-QAF Datasheet - Page 16

• Manufacturer Part Number: SST25VF080B-50-4C-QAF
• Description: Flash 8M (1Mx8) 50MHz 2.7-3.6V Commercial
• Manufacturer: Microchip Technology

Specifications of SST25VF080B-50-4C-QAF

• Architecture: Sectored
• Interface Type: 4-Wire
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 15 mA
• Mounting Style: SMD/SMT
• Organization: 4 KB x 256
• Memory Type: SPI Flash
• Memory Size: 8 Mbit
• Operating Temperature: + 70 C
• Package / Case: WSON
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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©2011 Silicon Storage Technology, Inc.
4-KByte Sector-Erase
The Sector-Erase instruction clears all bits in the selected 4 KByte sector to FFH. A Sector-Erase
instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-
Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any com-
mand sequence. The Sector-Erase instruction is initiated by executing an 8-bit command, 20H, fol-
lowed by address bits [A
determine the sector address (SA
before the instruction is executed. The user may poll the Busy bit in the software status register or wait
T
Erase sequence.
Figure 12:Sector-Erase Sequence
SE
for the completion of the internal self-timed Sector-Erase cycle. See Figure 12 for the Sector-
SCK
CE#
SO
SI
23
-A
MODE 3
MODE 0
0
]. Address bits [A
X
), remaining address bits can be V
MSB
0 1 2 3 4 5 6 7 8
16
20
HIGH IMPEDANCE
MS
-A
12
MSB
] (A
ADD.
8 Mbit SPI Serial Flash
MS
15 16
= Most Significant address) are used to
ADD.
IL
23 24
or V
1296 SecErase.0
ADD.
IH.
31
CE# must be driven high
SST25VF080B
S71296-05-000
Data Sheet
02/11