SI4914BDY-T1-E3 Vishay, SI4914BDY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4914BDY-T1-E3
• Description: MOSFET Small Signal 30V 8.4/8.0A 2.1/3.1
• Manufacturer: Vishay

Specifications of SI4914BDY-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.021 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6.7 A @ Channel 1 or 7.4 A @ Channel 2
• Power Dissipation: 1700 mW @ Channel 1 or 2000 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 7.4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 16.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 2.7V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si4914BDY
Vishay Siliconix
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 120 °C/W for Channel 1 and 115 °C/W for Channel 2.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
MOSFET SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
b
a
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
I
V
D(on)
DS(on)
V
GS(th)
Q
Q
GSS
DSS
J
DS
g
Q
R
DS
SD
fs
gs
gd
g
g
= 25 °C, unless otherwise noted
/T
Steady State
/T
J
J
t ≤ 10 s
V
V
V
DS
DS
DS
= 30 V, V
V
= 15 V, V
= 15 V, V
V
V
V
V
I
DS
V
V
GS
V
V
V
V
S
DS
DS
DS
I
GS
GS
S
GS
GS
DS
DS
= 1.7 A, V
= V
= 1 A, V
Symbol
= 0 V, I
= 0 V, V
= 30 V, V
= 5 V, V
I
= 4.5 V, I
= 4.5 V, I
R
R
= 10 V, I
= 10 V, I
D
= 15 V, I
= 15 V, I
Channel-1
Channel-2
thJA
thJF
Test Conditions
GS
= 250 µA
GS
GS
GS
, I
= 0 V, T
D
= 4.5 V, I
= 4.5 V, I
D
GS
GS
GS
GS
= 250 µA
= 250 µA
GS
D
D
D
D
D
D
= 0 V
= 10 V
= 20 V
= 8 A
= 8 A
= 8 A
= 8 A
= 6 A
= 6 A
= 0 V
= 0 V
J
Typ.
= 85 °C
D
D
59
36
= 8 A
= 8 A
Channel-1
Ch-1
Ch-2
Ch-1
Ch-1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Max.
70
45
Min.
1.2
1.2
30
30
20
20
Typ.
52
32
Channel-2
0.0165
0.0155
0.0215
S09-2109-Rev. E, 12-Oct-09
Typ.
0.020
- 6.2
0.77
0.46
6.7
7.0
2.8
2.8
2.0
2.0
2.9
2.0
35
29
33
Document Number: 69654
a
Max.
62.5
10000
40
0.021
0.020
0.027
0.025
Max.
10.5
11.0
100
100
100
2.7
2.7
1.1
0.5
6.0
4.0
15
1
mV/°C
°C/W
Unit
Unit
nA
µA
nC
Ω
Ω
V
V
A
S
V