SI4914BDY-T1-E3 Vishay, SI4914BDY-T1-E3 Datasheet - Page 11

• Manufacturer Part Number: SI4914BDY-T1-E3
• Description: MOSFET Small Signal 30V 8.4/8.0A 2.1/3.1
• Manufacturer: Vishay

Specifications of SI4914BDY-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.021 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6.7 A @ Channel 1 or 7.4 A @ Channel 2
• Power Dissipation: 1700 mW @ Channel 1 or 2000 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 7.4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 16.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 2.7V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69654.
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.1
0.2
0.05
0.02
Duty Cycle = 0.5
0.02
0.1
0.05
Duty Cycle = 0.5
0.2
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
1
1
A
= P
Vishay Siliconix
t
2
100
DM
Si4914BDY
Z
thJA
thJA
t
t
1
2
(t)
= 115 °C/W
www.vishay.com
1000
1
0
11