SI4914BDY-T1-E3 Vishay, SI4914BDY-T1-E3 Datasheet - Page 10

• Manufacturer Part Number: SI4914BDY-T1-E3
• Description: MOSFET Small Signal 30V 8.4/8.0A 2.1/3.1
• Manufacturer: Vishay

Specifications of SI4914BDY-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.021 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6.7 A @ Channel 1 or 7.4 A @ Channel 2
• Power Dissipation: 1700 mW @ Channel 1 or 2000 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 7.4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 16.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 2.7V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si4914BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
4.0
3.2
2.4
1.6
0.8
0
0
25
D
Power, Junction-to-Foot
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
11.0
100
8.8
6.6
4.4
2.2
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
Package Limited
125
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0
0
125
25
150
Power, Junction-to-Ambient
T
A
- Ambient Temperature (°C)
50
75
S09-2109-Rev. E, 12-Oct-09
Document Number: 69654
100
125
150