TP0606N3-G Supertex, TP0606N3-G Datasheet - Page 4

• Manufacturer Part Number: TP0606N3-G
• Description: MOSFET Small Signal 60V 3.5Ohm
• Manufacturer: Supertex
• Type: Power MOSFETr

Specifications of TP0606N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 3.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.32 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 3.5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
200
150
100
1.1
1.0
0.9
50
-5
-4
-3
-2
-1
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
BV
V
DS
DSS
-2
Transfer Characteristics
-10
0
= -25V
Variation with Temperature
V
GS
V
-4
DS
T
(volts)
j
-20
50
(volts)
(°C)
-6
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
f = 1MHz
-8
C
C
RSS
ISS
(cont.)
150
-10
-40
4
1.4
1.2
1.0
0.8
0.6
-10
15
12
-8
-6
-4
-2
9
6
3
0
0
-50
0
0
V
(th)
●
Gate Drive Dynamic Characteristics
75 pF
On-Resistance vs. Drain Current
and R
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-0.8
0.5
V
GS
0
Q
DS
= -5V
G
R
-10V, -0.75A
I
Variation with Temperature
D
(nanocoulombs)
DS(ON)
-1.6
1.0
(amperes)
T
V
V
j
GS
V
50
DS
(°C)
(th)
@
= -10V
= -10V
-2.4
1.5
@ -1mA
●
www.supertex.com
V
DS
100
-3.2
2.0
= -40V
200 pF
-4.0
150
2.5
2.0
1.6
1.2
0.8
0.4
0
TP0606