SI1405DL-T1-E3 Vishay, SI1405DL-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1405DL-T1-E3
• Description: MOSFET Small Signal 8V 1.8A
• Manufacturer: Vishay

Specifications of SI1405DL-T1-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.125 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 568 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Drain Current Id: 1.6A
• On Resistance Rds(on): 125mohm
• Power Dissipation Pd: 625mW
• No. Of Pins: 6
• Peak Reflow Compatible (260 C): Yes
• Reel Quantity: 3000
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 71073
S-01560—Rev. B, 17-Jul-00
0.5
0.4
0.3
0.2
0.1
0.1
0
5
4
3
2
1
0
5
1
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 1.8 A
0.2
On-Resistance vs. Drain Current
= 4 V
1
1
V
SD
Q
g
V
– Source-to-Drain Voltage (V)
I
0.4
GS
D
– Total Gate Charge (nC)
2
T
– Drain Current (A)
Gate Charge
= 1.8 V
J
2
= 150 C
0.6
3
3
0.8
4
V
V
GS
GS
T
= 2.5 V
= 4.5 V
J
4
= 25 C
1.0
5
1.2
5
6
New Product
1000
800
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200
0.5
0.4
0.3
0.2
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1.4
1.2
1.0
0.8
0.6
0
0
–50
0
0
I
On-Resistance vs. Gate-to-Source Voltage
D
On-Resistance vs. Junction Temperature
= 0.8 A
V
I
C
D
–25
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C
= 4.5 V
1
iss
T
V
V
2
0
J
GS
DS
– Junction Temperature ( C)
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
www.vishay.com FaxBack 408-970-5600
C
25
oss
Capacitance
I
D
2
= 1.8 A
Vishay Siliconix
50
4
3
75
Si1405DL
100
6
4
125
150
5
8
2-3