SI1405DL-T1-E3 Vishay, SI1405DL-T1-E3 Datasheet

MOSFET Small Signal 8V 1.8A

SI1405DL-T1-E3

Manufacturer Part Number
SI1405DL-T1-E3
Description
MOSFET Small Signal 8V 1.8A
Manufacturer
Vishay
Datasheet

Specifications of SI1405DL-T1-E3

Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.125 Ohm @ 4.5 V
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.6 A
Power Dissipation
568 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Continuous Drain Current Id
1.6A
On Resistance Rds(on)
125mohm
Power Dissipation Pd
625mW
No. Of Pins
6
Peak Reflow Compatible (260 C)
Yes
Reel Quantity
3000
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1405DL-T1-E3
Manufacturer:
ATMEL
Quantity:
1 844
Notes
a.
Document Number: 71073
S-01560—Rev. B, 17-Jul-00
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
–8
8
(V)
0.160 @ V
0.210 @ V
0.125 @ V
J
J
a
a
= 150 C)
= 150 C)
a
a
r
Parameter
Parameter
DS(on)
GS
GS
GS
a
a
= –2.5 V
= –1.8 V
= –4.5 V
( )
P-Channel 1.8-V (G-S) MOSFET
a
G
D
D
1
2
3
SC-70 (6-LEADS)
SOT-363
Top View
Steady State
Steady State
T
T
T
T
t
I
New Product
A
A
A
A
D
= 25 C
= 85 C
= 25 C
= 85 C
(A)
1.8
1.6
1.4
5 sec
6
5
4
D
D
S
Symbol
Symbol
T
R
R
R
V
J
V
I
P
P
, T
DM
thJA
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
Marking Code
OB XX
Typical
5 secs
0.625
0.400
–0.8
165
180
105
Part # Code
1.8
1.5
–55 to 150
Lot Traceability
and Date Code
www.vishay.com FaxBack 408-970-5600
–8
8
5
Steady State
Maximum
Vishay Siliconix
0.568
0.295
–0.8
200
220
130
1.6
1.2
Si1405DL
Unit
Unit
C/W
C/W
W
W
V
V
A
A
A
C
2-1

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SI1405DL-T1-E3 Summary of contents

Page 1

... stg Symbol Typical t 5 sec R R thJA thJA Steady State Steady State R thJF Si1405DL Vishay Siliconix Lot Traceability and Date Code Part # Code Steady State Unit – 1.6 1.8 1.5 1 –0.8 –0.8 0.625 0.568 W W 0.400 0.295 –55 to 150 C Maximum Unit ...

Page 2

... Si1405DL Vishay Siliconix Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... V GS 200 = 4 1.4 1.2 1.0 0.8 0 –50 0.5 0 0.3 I 0.2 0.1 0 1.0 1.2 0 Si1405DL Vishay Siliconix Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature – 100 125 T – Junction Temperature ( C) J On-Resistance vs. Gate-to-Source Voltage ...

Page 4

... Si1405DL Vishay Siliconix Threshold Voltage 0.4 0 250 A D 0.2 0.1 0.0 –0.1 –0.2 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Foot ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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