TP2640N3-G Supertex, TP2640N3-G Datasheet - Page 4

• Manufacturer Part Number: TP2640N3-G
• Description: MOSFET Small Signal 400V 15Ohm
• Manufacturer: Supertex

Specifications of TP2640N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 15 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.18 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves (cont.)
400
300
200
100
-2.0
-1.6
-1.2
-0.8
-0.4
1.1
1.0
0.9
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
DSS
-2
Transfer Characteristics
-10
0
Variation with Temperature
V
V
-4
GS
DS
T
(volts)
j
50
-20
(volts)
° (
C)
f = 1MHz
●
-6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
-8
C
C
ISS
RSS
150
-10
-40
4
1.2
1.0
0.8
0.6
0.4
-10
30
24
18
12
-8
-6
-4
-2
6
0
0
-50
0
0
V
●
TH
Tel: [phone]
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
and R
263pF
V
-0.4
GS
1
0
DS
= -2.5V
Q (nanocoulombs)
G
I
Variation with Temperature
D
-0.8
(amperes)
2
V
T
(th)
R
j
50
DS(ON)
V
° (
●
V
DS
@ -1mA
C)
GS
-1.2
www.supertex.com
= -10V
3
= -4.5V
@ -10V, -0.3A
V
100
GS
V
DS
-1.6
4
= -10V
678pF
= -40V
-2.0
150
5
TP2635
2.5
2.0
1.5
1.0
0.5
0