SSM6N7002FUTE85LF Toshiba, SSM6N7002FUTE85LF Datasheet - Page 3

• Manufacturer Part Number: SSM6N7002FUTE85LF
• Description: MOSFET Small Signal SMOS
• Manufacturer: Toshiba

Specifications of SSM6N7002FUTE85LF

• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @10V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 300 mW
• Mounting Style: SMD/SMT
• Package / Case: US
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
900
800
700
600
500
400
300
200
100
0
5
4
3
2
1
0
5
4
3
2
1
0
-25
10
0
Common Source
Common Source
Ta=25°C
VGS=4.5V
0
Drain-Source voltage VDS (V)
VGS=4.5V,ID=100mA
Ambient temperature Ta (°C)
0.5
25
Drain current ID (mA)
RDS(ON) - Ta
RDS(ON) - ID
5.0V
ID - VDS
50
5.0V,100mA
100
1
10V
75
Common Source
Ta=25°C
10
10V,500mA
100
7
1.5
VGS=2.3V
5
4.5
125
2.5
4.0
3.0
2.7
3.3
1000
150
2
3
1000
0.01
100
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
10
5
4
3
2
1
0
1
2
1
0
-25
0
0
Common Source
VDS=10V
Ta=100°C
0
25°C
Gate-Source voltage VGS (V)
Gate-Source voltage VGS (V)
2
Ambient temperature Ta (°C)
1
25
RDS(ON) - VGS
ID - VGS
4
Vth - Ta
-25°C
2
50
75
Common Source
ID=0.25mA
VDS=10V
Common Source
ID=100mA
6
SSM6N7002FU
3
100
Ta=100°C
8
4
-25°C
2004-05-07
125
25°C
150
10
5