SSM6N7002FUTE85LF Toshiba, SSM6N7002FUTE85LF Datasheet - Page 2

• Manufacturer Part Number: SSM6N7002FUTE85LF
• Description: MOSFET Small Signal SMOS
• Manufacturer: Toshiba

Specifications of SSM6N7002FUTE85LF

• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @10V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 300 mW
• Mounting Style: SMD/SMT
• Package / Case: US
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Switching Time Test Circuit
Precaution
product. For normal switching operation, V
than V
product.
V
Please take this into consideration for using the device. V
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
th
(a) Test circuit
can be expressed as voltage between gate and source when low operating current value is I
th
. (Relationship can be established as follows: V
10V
V
Duty < = 1%
V
(Z
Common Source
Ta = 25°C
0
DD
IN
out
Characteristics
: t
10 µs
= 30 V
r
= 50 Ω)
, t
f
<
Turn-on delay time
Turn-off delay time
2 ns
IN
(Ta = 25°C)
R
V
OUT
GS (on)
L
DD
V
R
Symbol
(BR) DSS
DS (ON)
⎪Y
td
td
I
I
C
C
C
GSS
DSS
V
oss
(on)
(off)
rss
iss
th
fs
requires higher voltage than V
⎪
GS (off)
(Q1, Q2 Common)
V
I
V
V
V
I
I
I
V
V
V
(b) V
(c) V
D
D
D
D
GS
DS
DS
DS
DS
DD
GS
= 0.1 mA, V
= 500 mA, V
= 100 mA, V
= 100 mA, V
2
= 60 V, V
= 10 V, I
= 10 V, I
= 25 V, V
= ± 20 V, V
= 30V, I
= 0 ~ 10V
GS
OUT
IN
<
recommended voltage of 4.5 V or higher to turn on this
V
Test Condition
th
V
D
D
D
DS (ON)
<
GS
GS
GS
= 200 mA,
GS
GS
GS
V
= 0.25 mA
= 200 mA
10 V
DS
V
DD
0 V
= 0
= 0, f = 1 MHz
= 0
GS (on)
= 10 V
= 5 V
= 4.5 V
= 0
td
(on)
)
th
and V
10%
t
GS (off)
r
10%
90%
Min
170
1.0
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
requires lower voltage
SSM6N7002FU
90%
D
Typ
2.0
2.1
2.2
1.4
5.8
2.4
⎯
⎯
⎯
⎯
⎯
17
26
=250 µA for this
td
(off)
t
f
2004-05-07
Max
± 10
2.5
3.0
3.2
3.3
4.0
⎯
40
⎯
⎯
⎯
⎯
1
Unit
mS
µA
µA
pF
pF
pF
ns
V
V
Ω