SSM6N7002FUTE85LF Toshiba, SSM6N7002FUTE85LF Datasheet
SSM6N7002FUTE85LF
Specifications of SSM6N7002FUTE85LF
Related parts for SSM6N7002FUTE85LF
SSM6N7002FUTE85LF Summary of contents
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... TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications • Small package • = 3.3 Ω (max) (@V Low ON resistance : 3.2 Ω (max) (@ 3.0 Ω (max) (@ Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Drain power dissipation (Ta = 25° ...
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Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on delay time Switching time Turn-off delay time Switching ...
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ID - VDS 1000 Common Source 900 Ta=25°C 5 800 7 700 10 600 500 400 300 200 100 VGS=2. 0.5 1 1.5 Drain-Source voltage VDS (V) RDS(ON Common Source Ta=25° 5.0V VGS=4.5V ...
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ID 1000 100 Common source VDS=10V Ta=25° 100 Drain current ID (mA VDS 100 Common Source VGS=0V f=1MHz Ta=25°C 10 Coss 1 0 Drain-Source voltage VDS (V) PD 400 mounted ...
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... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...