TN2510N8-G Supertex, TN2510N8-G Datasheet - Page 2

• Manufacturer Part Number: TN2510N8-G
• Description: MOSFET Small Signal 100V 1.5Ohm
• Manufacturer: Supertex
• Type: Power MOSFETr

Specifications of TN2510N8-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.73 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 1.5Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 730mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔR
† I
‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm.
ΔV
R
BV
V
1.
2.
Sym
t
I
C
C
t
C
d(OFF)
I
I
G
V
D(ON)
DS(ON)
TO-243AA (SOT-89)
d(ON)
GS(th)
GSS
DSS
DS(ON)
t
OSS
RSS
t
D
GS(th)
t
ISS
SD
rr
DSS
FS
r
f
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
Package
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Parameter
OUTPUT
INPUT
V
10V
0V
DD
0V
GS(th)
10%
DS(ON)
with temperature
with temperature
t
d(ON)
(continuous)
10%
t
(ON)
90%
●
(mA)
730
t
I
j
r
1235 Bordeaux Drive, Sunnyvale, CA 94089
D
.
O
(T
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
A
= 25
†
O
90%
t
d(OFF)
C unless otherwise specified)
t
(OFF)
(pulsed)
5.0
(A)
I
D
t
90%
F
10%
Power Dissipation
2
Min
100
400
0.6
1.2
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@T
A
1.6
(W)
= 25
Typ
800
300
2.0
6.0
1.5
1.0
70
30
15
GENERATOR
‡
-
-
-
-
-
-
-
-
-
-
-
-
-
O
PULSE
C
●
Tel: [phone]
INPUT
R
Max
0.75
-4.5
100
125
2.0
1.0
2.0
1.5
1.8
GEN
10
15
70
25
10
10
20
10
-
-
-
-
-
mV/
mmho V
(
Units
%/
O
C/W)
mA
θ
15
nA
µA
pF
ns
ns
Ω
V
V
A
V
jc
O
O
C
C V
●
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
Conditions
D
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GEN
GS
GS
www.supertex.com
(
= 1.5A,
O
78
C/W)
θ
= 0V, I
= V
= V
= ± 20V, V
= 0V, V
= 0.8 Max Rating,
= 0V, T
= 5.0V, V
= 10V, V
= 3.0V, I
= 4.5V, I
= 10V, I
= 10V, I
= 25V, I
= 0V,
= 25V,
= 25V,
= 0V, I
= 0V, I
ja
= 25Ω
‡
V
DD
DS
DS
R
L
, I
, I
D
SD
SD
D.U.T.
A
D
D
DS
D
D
D
OUTPUT
= 2.0mA
= 1.0mA
= 1.0mA
= 125°C
D
D
DS
= 1.5A
= 1.5A
(mA)
730
DS
= 750mA
= 750mA
= 1.0A
I
= Max Rating
= 250mA
= 750mA
DR
DS
= 25V
= 25V
†
= 0V
TN2510
I
5.0
(A)
DRM