VN3205N3-G Supertex, VN3205N3-G Datasheet - Page 5

• Manufacturer Part Number: VN3205N3-G
• Description: MOSFET Small Signal 50V 0.3Ohm
• Manufacturer: Supertex

Specifications of VN3205N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.2 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
400
300
200
100
1.1
1.0
0.9
10
0
8
6
4
2
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
DS
DSS
2
Transfer Characteristics
10
0
= 25V
Variation with Temperature
f = 1MHz
4
V
V
DS
T
GS (volts)
J
(volts)
50
20
(
O
C)
C
●
6
C
RSS
1235 Bordeaux Drive, Sunnyvale, CA 94089
ISS
100
30
8
(cont.)
150
40
10
5
1.0
0.8
0.6
0.4
0.2
1.2
1.1
1.0
0.9
0.8
0.7
10
0
8
6
4
2
0
-50
0
0
V
●
(th)
Gate Drive Dynamic Characteristics
Tel: [phone]
On-Resistance vs. Drain Current
V
215 pF
and R
DS
4
1
= 10V
V
0
GS
DS
Q
Variation with Temperature
= 4.5V
G
I
R
D
(nanocoulombs)
8
2
DS(ON)
(amperes)
T
J
50
(
O
V
C)
GS(th)
V
●
@ 10V, 3A
12
GS
3
www.supertex.com
V
325 pF
= 10V
@ 1mA
DS
100
= 40V
16
4
150
20
5
1.6
1.4
1.2
1.0
0.8
0.6
VN3205