2N7000-G Supertex, 2N7000-G Datasheet - Page 4

• Manufacturer Part Number: 2N7000-G
• Description: MOSFET Small Signal 60V 5Ohm
• Manufacturer: Supertex

Specifications of 2N7000-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
100
1.1
1.0
0.9
2.5
2.0
1.5
1.0
0.5
75
50
25
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
DS
DSS
2
= 25V
Transfer Characteristics
10
0
Variation with Temperature
T
A
V
= -55
V
GS
4
DS
T
(volts)
j
O
50
20
C �
(volts)
(
O
C)
●
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
f = 1MHz
100
30
8
125
C
(cont.)
C
25
ISS
RSS
O
O
C
C
150
10
40
4
5.0
4.0
3.0
2.0
1.0
1.6
1.4
1.2
1.0
0.8
0.6
10
0
8
6
4
2
0
-50
0
0
●
V
(th)
Tel: [phone]
Gate Drive Dynamic Characteristics
40 pF
On-Resistance vs. Drain Current
V
and R
GS
0.5
0.2
V
= 4.5V
(th)
0
Q
DS
G
@ 1mA
I
D
Variation with Temperature
(nanocoulombs)
1.0
0.4
(amperes)
R
T
DS
j
50
V
(
●
O
@ 10V, 1.0A
DS
C)
www.supertex.com
1.5
0.6
= 10V
80 pF
V
100
GS
2.0
0.8
= 10V
40V
150
2.5
1.0
2N7000
1.9
1.6
1.3
1.0
0.7
0.4