FB180SA10P Vishay, FB180SA10P Datasheet - Page 5

• Manufacturer Part Number: FB180SA10P
• Description: MOSFET Power N-Chan 100V 180 Amp
• Manufacturer: Vishay

Specifications of FB180SA10P

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Source
• Resistance Drain-source Rds (on): 0.0065 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 180 A
• Power Dissipation: 480000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-227
• Continuous Drain Current Id: 180A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 6.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 94541
Revision: 30-Jul-10
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
I
A S
20 V
R
G
V
DS
0.001
t
0.01
p
0.1
0.00001
1
I
D = 0.50
AS
D.U.T
0.20
0.10
0.05
0.02
0.01
0.01 Ω
L
t p
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Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case
V
15 V
(B R )D S S
(THERMAL RESPONSE)
Driver
0.0001
SINGLE PULSE
+
-
V
DD
Power MOSFET, 180 A
t , Rectangular Pulse Duration (sec)
A
1
0.001
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
1500
1200
900
600
300
1. Duty factor D = t / t
2. Peak T = P
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Notes:
0
10 V
25
Fig. 13a - Basic Gate Charge Waveform
Starting T , Junction Temperature( C)
V
J
G
0.01
DM
50
Q
x Z
GS
1
thJC
Vishay Semiconductors
J
P
2
DM
+ T
75
C
t
Charge
1
Q
Q
GD
G
t
2
100
FB180SA10P
TOP
BOTTOM
0.1
125
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100A
160A
°
I D
71A
150
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