2N6660 Supertex, 2N6660 Datasheet

2N6660

Manufacturer Part Number

2N6660

Description

MOSFET Power 60V 3Ohm

Manufacturer

Supertex

Type

Power MOSFETr

Datasheet

1.2N6660.pdf (3 pages)

Specifications of 2N6660

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

3 Ohms

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

410 mA

Power Dissipation

6.25 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-39

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

3Ohm

Drain-source On-volt

60V

Gate-source Voltage (max)

±20V

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

Package Type

TO-39

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N6660

Manufacturer:

SIX

Quantity:

200

Company:

BOSTOCK HK LIMITED

Part Number:

2N6660

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

2N6660

Manufacturer:

MICROCHIP/微芯

Quantity:

20 000

Company:

Allchip Electronic(HK) Limited

Part Number:

2N6660

Manufacturer:

SOLIDSTAT

Quantity:

4 012

Current page: 1 of 3
Download datasheet (370Kb)

Features

►

Applications

►

Package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

Supertex inc.

Ordering Information

Parameter

Operating and storage temperature

Soldering temperature

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Hi-Rel processing available

Motor controls

Converters

Ampliﬁers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

2N6660

Device

ISS

Supertex inc.

and fast switching speeds

Package Option

TO-39

●

N-Channel Enhancement-Mode

Vertical DMOS FET

1235 Bordeaux Drive, Sunnyvale, CA 94089

-55°C to +150°C

+300°C

Value

±20V

DGS

DSS

(V)

/BV

Pin Conﬁguration

Product Marking

General Description

The Supertex 2N6660 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Package may or may not include the following marks: Si or

DGS

●

Tel: 408-222-8888

2 N66 6 0

Y Y W W

SOURCE

(max)

3.0

DS(ON)

(Ω)

(Case : Drain)

TO-39

YY = Year Sealed

WW = Week Sealed

●

www.supertex.com

GATE

DRAIN

(min)

2N6660

D(ON)

1.5

(A)

Related parts for 2N6660

2N6660 Summary of contents

Page 1

... Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET General Description The Supertex 2N6660 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefﬁ ...

Page 2

... V = Max rating GS DS µ 0.8 Max Rating, 500 0V 125 10V 10V 5.0V 0. Ω 3 10V 1. mmho V = 25V 0. 0V 24V 1.0MHz 25V 1.0A 25Ω 10 GEN - Pulse Generator R GEN INPUT ● Tel: 408-222-8888 ● www.supertex.com 2N6660 I DRM (A) 3 OUTPUT D.U.T. ...

Page 3

... No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the ©2010 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-2N6660 B032610 β β ...

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