ZXMN3B04N8TA Diodes Inc, ZXMN3B04N8TA Datasheet - Page 3

• Manufacturer Part Number: ZXMN3B04N8TA
• Description: MOSFET Power 30V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN3B04N8TA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 8.9 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ZXMN3B04N8
CHARACTERISTICS
ISSUE 2 - MAY 2004
3
S E M I C O N D U C T O R S