ZXMN3B04N8TA Diodes Inc, ZXMN3B04N8TA Datasheet
Home Integrated Circuits (ICs) MOSFET Power ZXMN3B04N8TA
Manufacturer Part Number
ZXMN3B04N8TA
Description
MOSFET Power 30V N-Chnl UMOS
Specifications of ZXMN3B04N8TA
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.025 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
8.9 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
ZXMN3B04N8TA
Manufacturer:
ZETEX/DIODES
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
SUMMARY
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
APPLICATIONS
•
•
•
•
ORDERING INFORMATION
DEVICE MARKING
•
ISSUE 2 - MAY 2004
V
DEVICE
ZXMN3B04N8TA
ZXMN3B04N8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC converters
Power management functions
Disconnect switches
Motor control
ZXMN
3B04
=30V : R
DS
REEL
SIZE
(
13”
on
7”
)=0.025 ; I
WIDTH
12mm
12mm
TAPE
D
= 8.9A
QUANTITY
2500 units
PER REEL
500 units
1
ZXMN3B04N8
S E M I C O N D U C T O R S
Top View
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ZXMN3B04N8TA Summary of contents
... Low profile SOIC package APPLICATIONS • converters • Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN3B04N8TA 7” 12mm ZXMN3B04N8TC 13” 12mm DEVICE MARKING • ZXMN 3B04 ISSUE 2 - MAY 2004 = 8.9A D QUANTITY PER REEL 500 units ...
ZXMN3B04N8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate source voltage Continuous drain current @ V =4.5V =4.5V =4.5V (c) Pulsed drain current Continuous source current (body diode) Pulsed source current ...
ISSUE 2 - MAY 2004 CHARACTERISTICS 3 ZXMN3B04N8 ...
ZXMN3B04N8 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (1) resistance (1) (3) Forward transconductance (3) DYNAMIC Input capacitance Output capacitance Reverse transfer capacitance (2) (3) ...
ISSUE 2 - MAY 2004 TYPICAL CHARACTERISTICS 5 ZXMN3B04N8 ...
ZXMN3B04N8 TYPICAL CHARACTERISTICS 6 ISSUE 2 - MAY 2004 ...
PACKAGE OUTLINE Controlling dimensions are in inches. Approximate conversions are given in millimeters PACKAGE DIMENSIONS Inches Millimeters DIM Min Max Min Max A 0.053 0.069 1.35 1.75 A1 0.004 0.010 0.10 0.25 D 0.189 ...
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