ZXMN3B04N8TA Diodes Inc, ZXMN3B04N8TA Datasheet - Page 2

• Manufacturer Part Number: ZXMN3B04N8TA
• Description: MOSFET Power 30V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN3B04N8TA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 8.9 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ZXMN3B04N8
PARAMETER
Drain-source voltage
Gate source voltage
Continuous drain current
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
PARAMETER
Junction to ambient
Junction to ambient
S E M I C O N D U C T O R S
(c)
(a)
(b)
A
A
=25°C
=25°C
@ V
@ V
@ V
(a)
(b)
GS
GS
GS
=4.5V; T
=4.5V; T
=4.5V; T
(c)
(b)
A
A
A
=25°C
=70°C
=25°C
10 sec.
(b)
(b)
(a)
2
SYMBOL
R
R
SYMBOL
V
V
I
I
I
I
P
P
T
JA
JA
D
DM
S
SM
D
D
j
DSS
GS
:T
stg
-55 to +150
VALUE
62.5
41.4
LIMIT
8.9
7.3
7.2
4.5
30
45
45
16
24
2
3
12
ISSUE 2 - MAY 2004
UNIT
°C/W
°C/W
mW/°C
mW/°C
UNIT
°C
W
W
A
A
A
A
A
A
V
V