IRF9Z24SPBF Vishay, IRF9Z24SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF9Z24SPBF
• Description: MOSFET Power P-Chan 60V 11 Amp
• Manufacturer: Vishay

Specifications of IRF9Z24SPBF

• Transistor Polarity: P-Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Voltage Vgs Max: 20V
• Transistor Case Style: D2-PAK
• Threshold Voltage Vgs Typ: -4V
• Rohs Compliant: Yes
• Fall Time: 29 ns
• Rise Time: 68 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
www.vishay.com
4
91091_06
91091_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1250
1000
750
500
250
20
16
12
0
8
4
0
10
0
I
0
D
= - 11 A
- V
DS ,
5
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
DS
10
= - 30 V
V
C
C
C
GS
iss
rss
oss
V
= 0 V, f = 1 MHz
= C
= C
DS
= C
10
= - 48 V
gs
gd
ds
15
1
+ C
+ C
gd
gd
For test circuit
see figure 13
, C
C
C
C
ds
iss
oss
rss
20
Shorted
25
91091_07
91091_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
Fig. 8 - Maximum Safe Operating Area
10
-1
1
0
5
1
2
5
2
5
2
0.5
0.1
2
Operation in this area limited by R
- V
- V
1.5
5
SD
DS
175
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
°
C
2
T
T
Single Pulse
2.5
C
J
= 175 °C
= 25 °C
5
S10-1728-Rev. B, 02-Aug-10
10
Document Number: 91091
25
3.5
2
°
C
5
10
100
10
1
10
ms
4.5
µs
ms
2
DS(on)
V
µs
GS
2
= 0 V
5
5.5
10
3