IRF9Z24SPBF Vishay, IRF9Z24SPBF Datasheet - Page 2

• Manufacturer Part Number: IRF9Z24SPBF
• Description: MOSFET Power P-Chan 60V 11 Amp
• Manufacturer: Vishay

Specifications of IRF9Z24SPBF

• Transistor Polarity: P-Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Voltage Vgs Max: 20V
• Transistor Case Style: D2-PAK
• Threshold Voltage Vgs Typ: -4V
• Rohs Compliant: Yes
• Fall Time: 29 ns
• Rise Time: 68 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses IRF9Z24, SiHF9Z24 data and test conditions.
www.vishay.com
2
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Drain-Source Body Diode Characteristics
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
SM
t
I
t
t
on
DS
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
g
rr
/T
J
T
V
V
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
GS
GS
V
= 25 °C, I
R
T
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
= - 10 V
= - 10 V
g
J
= 18 , R
= 25 °C, I
MIN.
= - 48 V, V
V
V
V
-
-
V
V
f = 1.0 MHz, see fig. 5
DS
DD
DS
GS
TEST CONDITIONS
DS
F
= - 25 V, I
= - 30 V, I
= V
= 0 V, I
= - 60 V, V
= -11 A, dI/dt = 100 A/μs
V
V
V
GS
DS
D
S
GS
I
GS
D
GS
= - 11 A, V
= 2.5 , see fig. 10
, I
= - 25 V,
= ± 20 V
= - 11 A, V
see fig. 6 and 13
= 0 V,
D
D
= 0 V, T
= - 250 μA
D
= - 250 μA
D
I
D
= - 6.6 A
GS
= - 11 A,
= - 6.6 A
D
TYP.
= 0 V
= - 1 mA
J
GS
-
-
DS
= 150 °C
G
c
= 0 V
c
= - 48 V,
b
b, c
c
b
b
D
S
b, c
MIN.
- 2.0
- 60
1.4
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
40
S10-1728-Rev. B, 02-Aug-10
Document Number: 91091
- 0.056
TYP.
570
360
100
320
65
13
68
15
29
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
- 100
- 500
- 4.0
0.28
- 6.3
- 11
- 44
200
640
5.4
S
19
11
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
V/°C
)
nC
nC
nA
μA
pF
ns
ns

S
A
V
V
V