IRF9Z24SPBF Vishay, IRF9Z24SPBF Datasheet

MOSFET Power P-Chan 60V 11 Amp

IRF9Z24SPBF

Manufacturer Part Number
IRF9Z24SPBF
Description
MOSFET Power P-Chan 60V 11 Amp
Manufacturer
Vishay
Datasheets

Specifications of IRF9Z24SPBF

Transistor Polarity
P-Channel
Continuous Drain Current Id
11A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
-10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
3700 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Voltage Vgs Max
20V
Transistor Case Style
D2-PAK
Threshold Voltage Vgs Typ
-4V
Rohs Compliant
Yes
Fall Time
29 ns
Rise Time
68 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF9Z24SPBF
Quantity:
10 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. Uses IRF9Z24, SiHF9Z24 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91091
S10-1728-Rev. B, 02-Aug-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
I
2
DS
DS(on)
g
gs
gd
SD
PAK
DD
(Max.) (nC)
(nC)
(V)
(nC)
 - 11 A, dI/dt  140 A/μs, V
= - 25 V, starting T
()
(TO-262)
G
D
S
a, e
G
D
J
2
D
PAK (TO-263)
e
= 25 °C, L = 2.3 mH, R
S
c, e
a
a
b, e
V
DD
GS
 V
= - 10 V
D
SiHF9Z24S-GE3
IRF9Z24SPbF
SiHF9Z24S-E3
IRF9Z24S
SiHF9Z24S
2
DS
PAK (TO-263)
, T
G
Single
J
- 60
5.4
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
19
11
 175 °C.
P-Channel MOSFET
g
C
= 25 , I
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.28
S
D
GS
at - 10 V
AS
= - 11 A (see fig. 12).
T
T
D
SiHF9Z24STRL-GE3
IRF9Z24STRLPbF
SiHF9Z24STL-E3
IRF9Z24STRL
SiHF9Z24STL
for 10 s
C
A
2
= 25 °C
= 25 °C
PAK (TO-263)
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Advanced Process Technology
• Surface Mount (IRF9Z24S, SiHF9Z24S)
• Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
accommodating die size up to HEX-4. It provides the
highest
on-resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IR9Z24L, SiH9Z24L) is available
for low-profile applications.
2
Definition
PAK is suitable for high current applications because of
a
a
2
a
PAK is a surface mount power package capable of
a
a
power
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
DM
I
AR
GS
D
SiHF9Z24STRR-GE3
IRF9Z24STRRPbF
SiHF9Z24STR-E3
IRF9Z24STRR
SiHF9Z24STR
DS
AS
AR
D
D
2
stg
PAK (TO-263)
capability
a
a
- 55 to + 175
and
a
a
LIMIT
300
± 20
- 7.7
0.40
- 4.5
- 60
- 11
- 44
- 11
240
6.0
3.7
60
a
Vishay Siliconix
d
the
I
-
IRF9Z24LPbF
SiHF9Z24L-E3
IRF9Z24L
SiHF9Z24L
2
PAK (TO-262)
lowest
www.vishay.com
UNIT
W/°C
V/ns
possible
mJ
mJ
°C
W
W
V
A
A
1

Related parts for IRF9Z24SPBF

IRF9Z24SPBF Summary of contents

Page 1

... D PAK (TO-263 ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF9Z24S-GE3 IRF9Z24SPbF Lead (Pb)-free SiHF9Z24S-E3 IRF9Z24S SnPb SiHF9Z24S Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain-Source Voltage Gate-Source Voltage e Continuous Drain Current a, e Pulsed Drain Current Linear Derating Factor ...

Page 2

... IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... V Bottom - 4 µs Pulse Width Drain-to-Source Voltage ( 91091_02 Fig Typical Output Characteristics Document Number: 91091 S10-1728-Rev. B, 02-Aug-10 IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L - 4 ° 91091_03 - 4 175 ° 91091_04 Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 2.5 2 ...

Page 4

... IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix 1250 MHz iss rss gd 1000 oss ds 750 500 250 Drain-to-Source Voltage ( 91091_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91091_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91091_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91091 S10-1728-Rev. B, 02-Aug-10 IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration ( Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 800 Top Bottom 600 400 200 125 25 75 100 50 Starting T , Junction Temperature (°C) 91091_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current 4 7 150 175 Current regulator Same type as D.U.T. ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91091. Document Number: 91091 S10-1728-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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