IRF9530SPBF Vishay, IRF9530SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF9530SPBF
• Description: MOSFET Power P-Chan 100V 12 Amp
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9530SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.7 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.3Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 12A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: SMD-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9530S, SiHF9530S
Vishay Siliconix
www.vishay.com
4
91077_06
91077_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1800
1500
1200
900
600
300
20
16
12
8
4
0
0
10
0
I
0
D
= - 12 A
V
- V
DS
10
DS ,
Q
= - 20 V
V
G
DS
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
= - 50 V
V
20
DS
V
C
C
C
= - 80 V
GS
iss
rss
oss
= 0 V, f = 1 MHz
= C
= C
= C
10
gs
gd
30
ds
1
+ C
+ C
C
C
C
iss
oss
rss
gd
gd
For test circuit
see figure 13
, C
40
ds
Shorted
50
91076_07
91077_08
10
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
0.1
10
-1
1
0
2
3
5
2
5
2
5
2
5
2
1
1.0
0.1
Fig. 8 - Maximum Safe Operating Area
2
- V
- V
5
SD
DS
Operation in this area limited
2.0
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
175
2
°
C
T
T
Single Pulse
25
C
J
by R
5
= 175 °C
= 25 °C
°
3.0
C
10
DS(on)
2
S10-1728-Rev. B, 02-Aug-10
Document Number: 91077
5
10
4.0
10
100
1
10
2
V
ms
GS
2
µs
ms
µs
= 0 V
5
5.0
10
3