IRF9530SPBF Vishay, IRF9530SPBF Datasheet - Page 2

• Manufacturer Part Number: IRF9530SPBF
• Description: MOSFET Power P-Chan 100V 12 Amp
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9530SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.7 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.3Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 12A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: SMD-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9530S, SiHF9530S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
R
I
I
C
R
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
L
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
GS
GS
V
R
= 25 °C, I
T
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
Reference to 25 °C, I
= - 10 V
= - 10 V
J
= 25 °C, I
= 12 , R
= - 80 V, V
V
V
V
V
V
DS
f = 1.0 MHz, see fig. 5
DD
DS
DS
TYP.
GS
TEST CONDITIONS
-
-
-
= - 50 V, I
= - 50 V, I
F
= V
= - 100 V, V
= 0 V, I
V
V
= - 12 A, dI/dt = 100 A/μs
V
GS
DS
S
GS
D
I
GS
D
GS
= - 12 A, V
= 3.9 , see fig. 10
, I
= - 25 V,
= ± 20 V
= - 12 A, V
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
= - 250 μA
D
= - 250 μA
D
I
D
= - 7.2 A
= - 12 A,
GS
= - 7.2 A
D
= - 1 mA
= 0 V
J
GS
DS
= 150 °C
G
G
= 0 V
b
= - 80 V,
b
MAX.
D
S
b
b
b
D
S
1.7
62
40
b
- 100
MIN.
- 2.0
3.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-1728-Rev. B, 02-Aug-10
Document Number: 91077
- 0.10
TYP.
0.46
860
340
120
4.5
7.5
93
12
52
31
39
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
0.30
- 6.3
0.92
- 12
- 48
240
6.8
S
38
21
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

S
A
V
V
V