SI4835DDY-T1-E3 Vishay, SI4835DDY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4835DDY-T1-E3
• Description: MOSFET Power 30V 13A 5.6W 18mohm @ 10V
• Manufacturer: Vishay

Specifications of SI4835DDY-T1-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 8.7 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: -13A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 25V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
7.0
5.6
4.2
2.8
1.4
0.0
0
25
D
Power, Junction-to-Foot
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
15
12
9
6
3
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
25
New Product
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
2.0
1.6
1.2
0.8
0.4
0.0
0
125
Power Derating, Junction-to-Ambient
25
T
150
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
Si4835DDY
100
www.vishay.com
125
150
5