SI4835DDY-T1-E3 Vishay, SI4835DDY-T1-E3 Datasheet - Page 5
![MOSFET Power 30V 13A 5.6W 18mohm @ 10V](/photos/15/83/158327/soic-8_sml.jpg)
SI4835DDY-T1-E3
Manufacturer Part Number
SI4835DDY-T1-E3
Description
MOSFET Power 30V 13A 5.6W 18mohm @ 10V
Manufacturer
Vishay
Datasheet
1.SI4835DDY-T1-GE3.pdf
(7 pages)
Specifications of SI4835DDY-T1-E3
Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
8.7 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Continuous Drain Current Id
-13A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
25V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4835DDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
7.0
5.6
4.2
2.8
1.4
0.0
0
25
D
Power, Junction-to-Foot
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
15
12
9
6
3
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
25
New Product
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
2.0
1.6
1.2
0.8
0.4
0.0
0
125
Power Derating, Junction-to-Ambient
25
T
150
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
Si4835DDY
100
www.vishay.com
125
150
5