SI4835DDY-T1-E3 Vishay, SI4835DDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4835DDY-T1-E3
• Description: MOSFET Power 30V 13A 5.6W 18mohm @ 10V
• Manufacturer: Vishay

Specifications of SI4835DDY-T1-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 8.7 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: -13A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 25V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si4835DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
0.01
100
0.8
0.6
0.4
0.2
0.0
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
T
J
J
25
- Temperature (°C)
= 150 °C
0.6
50
75
0.01
0.8
100
0.1
I
10
D
0.01
1
T
I
= 5 mA
D
100
J
Limited by R
= 25 °C
= 250 µA
* V
1.0
GS
125
> minimum V
V
Single Pulse
DS
New Product
0.1
T
A
150
DS(on)
1.2
- Drain-to-Source Voltage (V)
= 25 °C
Safe Operating Area
*
GS
at which R
1
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
10
50
40
30
20
10
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
I
D
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
= 10 A
0.01
100
2
V
GS
- Gate-to-Source Voltage (V)
0.1
4
Time (s)
1
S09-0136-Rev. B, 02-Feb-09
Document Number: 69953
6
10
T
T
J
J
= 125 °C
= 25 °C
8
100
1000
10