SI4835DDY-T1-E3 Vishay, SI4835DDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4835DDY-T1-E3
• Description: MOSFET Power 30V 13A 5.6W 18mohm @ 10V
• Manufacturer: Vishay

Specifications of SI4835DDY-T1-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 8.7 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: -13A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 25V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
0.05
0.04
0.03
0.02
0.01
0.00
60
50
40
30
20
10
10
0
8
6
4
2
0
0
0
0
I
D
V
V
= 10 A
GS
GS
On-Resistance vs. Drain Current
10
= 10 V
= 4.5 V
10
1
V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
V
I
20
D
- Total Gate Charge (nC)
GS
V
Gate Charge
- Drain Current (A)
DS
V
20
= 4 V
2
GS
V
= 15 V
DS
= 10 V thru 5 V
30
= 10 V
V
GS
30
3
= 3 V
40
V
DS
40
= 20 V
4
50
New Product
60
50
5
3000
2400
1800
1200
600
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0
0
I
D
On-Resistance vs. Junction Temperature
C
= 10 A
- 25
rss
V
GS
6
1
V
V
V
GS
DS
GS
T
Transfer Characteristics
= 25 °C
0
J
= 125 °C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
Capacitance
12
2
C
oss
C
50
V
Vishay Siliconix
iss
GS
= - 10 V
Si4835DDY
18
3
75
V
GS
V
www.vishay.com
100
= - 55 °C
GS
24
4
= - 4.5 V
125
150
30
5
3