IPD060N03L G Infineon Technologies, IPD060N03L G Datasheet - Page 4

• Manufacturer Part Number: IPD060N03L G
• Description: MOSFET Power N-CH 30V 50A
• Manufacturer: Infineon Technologies

Specifications of IPD060N03L G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 56000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 5mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Fall Time: 3 ns
• Rise Time: 3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD060N03LGXT

Rev. 1.03
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
10
10
60
50
40
30
20
10
DS
0
-1
3
2
1
0
C
10
0
); T
)
-1
limited by on-state
resistance
C
p
=25 °C; D =0
50
DC
10
0
T
V
C
DS
100
[°C]
[V]
10
100 µs
1
1 ms
10 ms
10 µs
150
1 µs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.01
=f(t
0.1
10
60
50
40
30
20
10
C
1
0
10
); V
p
0
0
)
-6
0.02
0.01
0.5
0.2
0.05
0.1
GS
≥10 V
IPS060N03L G
single pulse
IPD060N03L G
10
p
0
-5
/T
50
10
0
-4
T
t
C
100
10
p
[°C]
0
[s]
-3
10
IPU060N03L G
IPF060N03L G
0
-2
150
10
0
-1
2008-04-15
200
10
1
0