IPD060N03L G Infineon Technologies, IPD060N03L G Datasheet - Page 2

• Manufacturer Part Number: IPD060N03L G
• Description: MOSFET Power N-CH 30V 50A
• Manufacturer: Infineon Technologies

Specifications of IPD060N03L G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 56000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 5mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Fall Time: 3 ns
• Rise Time: 3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD060N03LGXT

Rev. 1.03
2)
3)
4)
connection. PCB is vertical in still air.
5)
Maximum ratings, at T
Parameter
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
See figure 3 for more detailed information
See figure 13 for more detailed information
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
Measured from drain tab to source pin
j
=25 °C, unless otherwise specified
j
=25 °C, unless otherwise specified
5)
Symbol Conditions
Symbol Conditions
P
T
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
j
tot
(BR)DSS
GS(th)
, T
thJC
thJA
DS(on)
G
stg
T
minimal footprint
6 cm² cooling area
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
C
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=30 A
DS
=25 °C
=V
=30 V, V
=30 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
GS
, I
D
|R
D
D
=1 mA
D
=250 µA
D
GS
GS
DS
DS(on)max
=30 A
=30 A
=0 V,
=0 V,
=0 V
4)
IPS060N03L G
IPD060N03L G
,
min.
30
34
1
-
-
-
-
-
-
-
-
-
-55 ... 175
55/175/56
Values
Value
typ.
0.1
7.2
1.4
56
10
10
69
5
-
-
-
-
-
IPU060N03L G
IPF060N03L G
max.
100
100
2.7
2.2
75
50
1
9
6
-
-
-
Unit
W
°C
Unit
K/W
V
µA
nA
mΩ
Ω
S
2008-04-15