SIB411DK-T1-GE3 Vishay, SIB411DK-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIB411DK-T1-GE3
• Description: MOSFET Power 20V 9.0A 13W
• Manufacturer: Vishay

Specifications of SIB411DK-T1-GE3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.066 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 9.5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70
• Continuous Drain Current Id: -9A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiB411DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.1
0.1
1
1
10
10
http://www.vishay.com/ppg?74335.
-4
-4
0.2
Single Pulse
0.1
Duty Cycle = 0.5
0.2
0.05
Duty Cycle = 0.5
0.1
0.02
0.02
0.05
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
-3
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
2
S-80515-Rev. C, 10-Mar-08
DM
Document Number: 74335
100
Z
thJA
thJA
t
t
1
2
(t)
= 80 °C/W
10
1000
-1