SIB411DK-T1-GE3 Vishay, SIB411DK-T1-GE3 Datasheet - Page 2
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SIB411DK-T1-GE3
Manufacturer Part Number
SIB411DK-T1-GE3
Description
MOSFET Power 20V 9.0A 13W
Manufacturer
Vishay
Datasheet
1.SIB411DK-T1-GE3.pdf
(7 pages)
Specifications of SIB411DK-T1-GE3
Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.066 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
9.5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.8 A
Power Dissipation
2400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SC-70
Continuous Drain Current Id
-9A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
130mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
SiB411DK
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
J
= 25 °C, unless otherwise noted
a
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
t
I
I
C
V
DS(on)
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
I
GSS
DSS
Q
DS
g
Q
R
SM
I
t
t
t
DS
oss
t
t
t
t
SD
rss
iss
gd
S
rr
a
b
fs
gs
r
r
f
f
g
rr
g
/T
/T
J
J
I
V
F
V
I
DS
D
= - 3.8 A, di/dt = 100 A/µs, T
V
I
V
DS
D
DS
≅ - 4.8 A, V
DS
≅ - 4.8 A, V
= - 10 V, V
= - 10 V, V
V
= - 20 V, V
V
V
= - 10 V, V
V
V
V
V
V
V
V
GS
V
I
GS
GS
DS
DS
DD
DD
GS
S
DS
DS
DS
= - 3.8 A, V
= - 1.8 V, I
Test Conditions
= - 4.5 V, I
= - 2.5 V, I
= V
= - 10 V, I
= - 10 V, R
= - 10 V, R
= 0 V, I
≤ 5 V, V
= - 20 V, V
= 0 V, V
I
D
T
f = 1 MHz
GS
GEN
GS
= - 250 µA
C
GEN
GS
GS
= 25 °C
GS
, I
= - 4.5 V, I
D
= - 8 V, I
D
= - 4.5 V, R
GS
= 0 V, T
GS
= - 8 V, R
= 0 V, f = 1 MHz
= - 250 µA
D
D
= - 250 µA
D
D
GS
L
L
GS
= - 4.5 V
= - 0.77 A
= - 3.3 A
= - 3.3 A
= - 2.8 A
= ± 8 V
= 2.1 Ω
= 2.1 Ω
= 0 V
= 0 V
D
J
D
= 55 °C
= - 4.5 A
g
J
= - 4.5 A
g
= 1 Ω
= 25 °C
= 1 Ω
Min.
- 0.4
- 20
15
0.055
0.077
0.107
- 0.85
Typ.
- 18
470
2.2
9.5
0.9
1.4
7.5
95
65
10
10
40
45
75
10
25
10
20
10
15
6
5
5
S-80515-Rev. C, 10-Mar-08
Document Number: 74335
± 100
0.130
0.066
0.094
Max.
- 1.2
- 10
115
- 1
- 1
15
15
60
70
10
15
40
15
- 9
15
40
20
9
mV/°C
Unit
µA
nC
nC
nA
pF
ns
ns
ns
V
V
A
Ω
S
Ω
A
V