SIB411DK-T1-GE3 Vishay, SIB411DK-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIB411DK-T1-GE3
• Description: MOSFET Power 20V 9.0A 13W
• Manufacturer: Vishay

Specifications of SIB411DK-T1-GE3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.066 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 9.5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70
• Continuous Drain Current Id: -9A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiB411DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
10
1
- 50
0
Soure-Drain Diode Forward Voltage
- 25
I
D
0.2
= 250 µA
V
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
T
T
0.4
J
J
- Temperature (°C)
= 150 °C
25
0.6
50
75
0.8
0.01
100
0.1
10
1
100
0.1
T
Limited by R
J
* V
= 25 °C
1
Safe Operating Area, Junction-to-Case
GS
125
Single Pulse
T
A
> minimum V
= 25 °C
V
DS
1.2
150
DS(on)*
- Drain-to-Source Voltage (V)
1
GS
BVDSS limited
at which R
DS(on)
1 0
0.20
0.17
0.14
0.11
0.08
0.05
20
10
15
5
0
is specified
0.001
0
10 ms
100 µs
1 ms
100 ms
1 s
DC
10 s
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
100
1
V
GS
T
- Gate-to-Source Voltage (V)
0.1
J =
25 °C
2
Pulse (s)
1
S-80515-Rev. C, 10-Mar-08
Document Number: 74335
3
10
T
J =
125 °C
4
100
1000
5