SST5485-E3 Vishay, SST5485-E3 Datasheet - Page 7

• Manufacturer Part Number: SST5485-E3
• Description: JFET 35V 4mA
• Manufacturer: Vishay

Specifications of SST5485-E3

• Configuration: Single
• Transistor Polarity: N-Channel
• Package / Case: TO-236
• Gate-source Breakdown Voltage: - 25 V
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 25 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Breakdown Voltage Vbr: -25V
• Gate-source Cutoff Voltage Vgs(off) Max: -4V
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: 10mA
• Channel Type: N
• Gate-source Voltage (max): 25V
• Drain-gate Voltage (max): -25V
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70246.
S-50148—Rev. G, 24-Jan-05
Document Number: 70246
TYPICAL CHARACTERISTICS (T
20
16
12
8
4
0
10
Equivalent Input Noise Voltage vs. Frequency
V
I
GS(off)
D
= I
DSS
= −3 V
100
f − Frequency (Hz)
1 k
I
D
V
= 5 mA
DS
10 k
= 10 V
A
= 25_C UNLESS OTHERWISE NOTED)
100 k
20
16
12
8
4
0
0.1
V
Output Conductance vs. Drain Current
GS(off)
= −3 V
125_C
T
A
= −55_C
I
D
2N/SST5484 Series
− Drain Current (mA)
1
Vishay Siliconix
25_C
V
f = 1 kHz
DS
= 10 V
www.vishay.com
10
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