SST5485-E3 Vishay, SST5485-E3 Datasheet

JFET 35V 4mA

SST5485-E3

Manufacturer Part Number
SST5485-E3
Description
JFET 35V 4mA
Manufacturer
Vishay
Datasheets

Specifications of SST5485-E3

Configuration
Single
Transistor Polarity
N-Channel
Package / Case
TO-236
Gate-source Breakdown Voltage
- 25 V
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 25 V
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Breakdown Voltage Vbr
-25V
Gate-source Cutoff Voltage Vgs(off) Max
-4V
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Continuous Drain Current Id
10mA
Channel Type
N
Gate-source Voltage (max)
25V
Drain-gate Voltage (max)
-25V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs
designed
especially at high frequencies up to and beyond 400 MHz.
For applications information see AN102 and AN105.
S-50148—Rev. G, 24-Jan-05
Document Number: 70246
PRODUCT SUMMARY
FEATURES
D Excellent High-Frequency Gain:
D Very Low Noise: 2.5 dB (typ) @
D Very Low Distortion
D High AC/DC Switch Off-Isolation
Part Number
2N/SST5484
2N/SST5485
2N/SST5486
Gps 13 dB (typ) @ 400 MHz − 5485/6
400 MHz − 5485/6
to
provide
V
GS(off)
−0.3 to −3
−0.5 to −4
−2 to −6
D
S
G
(V)
high-performance
TO-226AA
(TO-92)
Top View
2N5484
2N5485
2N5486
1
2
3
V
(BR)GSS
−25
−25
−25
Min (V)
BENEFITS
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
N-Channel JFETs
amplification,
g
fs
Min (mS) I
3.5
3
4
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), packages provide low-cost options and are
available with tape-and-reel to support automated assembly
(see Packaging Information).
DSS
Min (mA)
1
4
8
D
S
*Marking Code for TO-236
1
2
SST5484 (H4)*
SST5485 (H5)*
SST5486 (H6)*
(SOT-23
Top View
APPLICATIONS
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
TO-236
)
2N/SST5484 Series
2N5484
2N5485
2N5486
3
Vishay Siliconix
G
SST5484
SST5485
SST5486
www.vishay.com
1

Related parts for SST5485-E3

SST5485-E3 Summary of contents

Page 1

... Packaging Information). 2N/SST5484 Series Vishay Siliconix 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 APPLICATIONS D High-Frequency Amplifier/Mixer D Oscillator D Sample-and-Hold D Very Low Capacitance Switches TO-236 (SOT- Top View SST5484 (H4)* SST5485 (H5)* SST5486 (H6)* *Marking Code for TO-236 www.vishay.com 1 ...

Page 2

... Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SPECIFICATIONS FOR 2N SERIES (T Parameter Symbol Static Gate-Source V (BR)GSS Breakdown Voltage Gate-Source Cutoff Voltage V GS(off) b Saturation Drain Current I DSS Gate Reverse Current Gate Reverse Current I I GSS ...

Page 3

... MHz 0 kHz 100 MHz 100 MHz 400 MHz 2 2N/SST5484 Series Vishay Siliconix Limits SST5484 SST5485 SST5486 Min Max Min Max Min Max Unit −25 −25 −25 −0.3 −3 −0.5 −4 −2 − −1 −1 −1 −200 −200 −200 www.vishay.com V V ...

Page 4

... Series Vishay Siliconix TYPICAL CHARACTERISTICS (T Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 20 I DSS DSS kHz 0 0 −2 −4 −6 V − Gate-Source Cutoff Voltage (V) GS(off) Gate Leakage Current 100 0 125_C 100 0 25_C 0 − Drain-Gate Voltage (V) DG Output Characteristics −2 V GS(off) ...

Page 5

... S-50148—Rev. G, 24-Jan-05 = 25_C UNLESS OTHERWISE NOTED −1.6 − kHz −1.6 −2 100 80 60 − 2N/SST5484 Series Vishay Siliconix Transfer Characteristics V = − GS(off −55_C A 25_C 125_C 0 −0.6 −1.2 −1.8 −2.4 V − Gate-Source Voltage (V) GS Transconductance vs. Gate-Source Voltage V = − GS(off kHz T = −55_C A 25_C 125_C 0 − ...

Page 6

... Series Vishay Siliconix TYPICAL CHARACTERISTICS (T Common-Source Input Capacitance vs. Gate-Source Voltage MHz −4 −8 −12 V − Gate-Source Voltage (V) GS Input Admittance 100 T = 25_C Common Source 10 1 0.1 100 200 f − Frequency (MHz) Reverse Admittance 25_C Common Source 1 0.1 0.01 100 200 f − ...

Page 7

... Frequency (Hz) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70246. ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords