SST5485-E3 Vishay, SST5485-E3 Datasheet - Page 2

• Manufacturer Part Number: SST5485-E3
• Description: JFET 35V 4mA
• Manufacturer: Vishay

Specifications of SST5485-E3

• Configuration: Single
• Transistor Polarity: N-Channel
• Package / Case: TO-236
• Gate-source Breakdown Voltage: - 25 V
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 25 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Breakdown Voltage Vbr: -25V
• Gate-source Cutoff Voltage Vgs(off) Max: -4V
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: 10mA
• Channel Type: N
• Gate-source Voltage (max): 25V
• Drain-gate Voltage (max): -25V
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2N/SST5484 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
Gate Current
Lead Temperature
Storage Temperature
www.vishay.com
2
SPECIFICATIONS FOR 2N SERIES (T
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Reverse Current
Gate Operating Current
Gate-Source
Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Common-Source
Output Capacitance
Equivalent Input
Noise Voltage
High-Frequency
Common-Source
Common-Source
Transconductance
Common-Source
Common-Source
Output Conductance
Common-Source
Common-Source
Input Conductance
C
Common-Source Power Gain
Noise Figure
g
S
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
d
c
c
P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
d
d
d
d
NO TAG
d
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
c
b
G i
NO TAG
d
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
V
Y
Y
V
Y
Y
Y
Y
(BR)GSS
I
I
C
GS(off)
I
C
os(RE)
C
f (RE)
fs(RE)
i (RE)
is(RE)
G
G
GS(F)
DSS
GSS
GSS
g
NF
g
e
I
oss
G
os
rss
iss
(RE)
fs
ps
n
V
V
V
V
V
R
V
I
I
I
DS
DS
DS
DS
D
DS
D
D
GS
G
= 4 mA
= 4 mA
= 4 mA
R
V
= 1 kW
I
V
V
V
V
V
I
V
V
V
V
= 15 V
= 15 V
= 15 V
= 15 V
= 15 V
Test Conditions
V
G
R
−65 to 150_C
G
= 0 V
GS
G
DS
DS
DS
DS
DS
DS
DG
DS
DS
DS
G
A
= 10 mA , V
= −1 mA , V
= 1 kW , f = 100 MHz
= −20 V, V
= 15 V, V
= 15 V, V
= 15 V, V
= 1 MW , f = 1 kHz
= 15 V, I
= 15 V, I
= 15 V, V
= 15 V, V
= 15 V, V
= 15 V, I
= 10 V, I
f = 100 MHz
= 25_C UNLESS OTHERWISE NOTED)
f = 100 Hz
f = 1 MHz
f = 1 kHz
10 mA
300_C
−25 V
D
D
D
D
DS
GS
GS
GS
GS
GS
GS
DS
= 10 nA
DS
= 1 mA
= 1 mA
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
= 1 mA
f = 100 MHz
f = 400 MHz
T
= 0 V
A
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 100_C
Operating Junction Temperature
Power Dissipation
Notes
a.
Derate 2.8 mW/_C above 25_C
−0.002
Typ
−0.2
0.05
−35
−20
0.8
2.2
0.7
5.5
5.5
0.8
0.3
2.5
10
45
65
20
21
13
1
2
1
a
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Min
−0.3
−25
2.5
16
1
3
2N5484
Max
−200
0.1
2.5
−3
−1
50
75
25
5
6
5
1
2
3
. . . . . . . . . . . . . . . . . . . . . . . . . .
Min
−0.5
−25
3.5
18
10
4
3
Limits
2N5485
Max Min Max Unit
−200
100
2.5
−4
10
−1
60
30
20
7
5
1
2
1
2
4
S-50148—Rev. G, 24-Jan-05
Document Number: 70246
−25
3.5
−2
18
10
8
4
2N5486
−55 to 150_C
−200
100
2.5
−6
20
−1
75
30
20
8
5
1
2
1
2
4
350 mW
√Hz
mA
mS
mS
mS
mS
mS
nV⁄
nA
nA
pA
mS
mS
mS
dB
pF
V
V
V