BC847BPDW1T1G ON Semiconductor, BC847BPDW1T1G Datasheet - Page 9

• Manufacturer Part Number: BC847BPDW1T1G
• Description: Bipolar Small Signal 100mA 50V Dual Complementary
• Manufacturer: ON Semiconductor

Specifications of BC847BPDW1T1G

• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Package / Case: SC-70-6
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V at NPN, 5 V at PNP
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 380 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 2
• Collector-emitter Voltage: 45V
• Collector-base Voltage(max): 50V
• Emitter-base Voltage (max): 6/5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 200
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

7.0
5.0
3.0
2.0
1.0
10
0.4 0.6
0.8
1.0
Figure 23. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
2.0
C
ib
TYPICAL NPN CHARACTERISTICS − BC847 SERIES
4.0
C
ob
6.0
8.0
10
T
A
= 25°C
20
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40
9
400
300
200
100
80
60
40
30
20
0.5
Figure 24. Current−Gain − Bandwidth Product
0.7 1.0
I
C
, COLLECTOR CURRENT (mAdc)
2.0
3.0
5.0
7.0
10
20
V
T
A
CE
= 25°C
= 10 V
30
50